NDT452AP Fairchild Semiconductor, NDT452AP Datasheet
NDT452AP
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NDT452AP Summary of contents
Page 1
... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) June 1996 = 0.065 @ V = -10V DS(ON 0 -4.5V. DS(ON DS(ON NDT452AP -30 ± 1.3 1.1 -65 to 150 42 12 NDT452AP Rev Units °C °C/W °C/W ...
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... I = -250 µ 125° - -5 125° - 1.0 MHz GEN GEN Min Typ Max Units - µA -10 µA 100 nA -100 nA -1 -1.6 -2.8 V -0.7 -1.2 -2.2 0.052 0.065 0.075 0.13 0.085 0.1 - 690 pF 430 pF 160 3.2 nC 5.2 nC NDT452AP Rev. B1 ...
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... C/W when mounted on a 0.0123 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -2.5 A (Note -2 /dt = 100 A/µ Min Typ Max Units -2.5 A -0.85 -1.2 V 100 ns is guaranteed NDT452AP Rev. B1 ...
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... Figure 6. Gate Threshold Variation with V = -3. 4.0 -4.5 -5.0 -6 -12 - DRAIN CURRENT (A) D Voltage and Drain Current. = -10V T = 125°C J 25°C -55° -12 - DRAIN CURRENT ( -250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. -10 -20 -20 GS 125 150 NDT452AP Rev. B1 ...
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... Figure 8. Body Diode Forward Voltage Variation with Current and Temperature -5. iss 6 C oss rss Figure 10. Gate Charge Characteristics. t d(on OUT Figure 12. Switching Waveforms 25°C -55°C 0.4 0.8 1.2 1 BODY DIODE FORWARD VOLTAGE ( -5V DS -10V -20V GATE CHARGE (nC off t t d(off PULSE WIDTH NDT452AP Rev INVERTED ...
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... G S 0.01 0.8 1 0.1 0 Figure 16. Maximum Safe Operating Area. 0.01 0 TIME (sec) 1 4.5"x5" FR-4 Board Still Air 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( -10V GS = See Note 25° DRAIN-SOURCE CURRENT ( ( See Note P(pk Duty Cycle ( NDT452AP Rev. B1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...