NDT452AP Fairchild Semiconductor, NDT452AP Datasheet - Page 3
![MOSFET P-CH 30V 5A SOT-223-4](/photos/5/46/54602/261-sot-223-4_sml.jpg)
NDT452AP
Manufacturer Part Number
NDT452AP
Description
MOSFET P-CH 30V 5A SOT-223-4
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.NDT452AP.pdf
(7 pages)
Specifications of NDT452AP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 15V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.065Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
5A
Power Dissipation
3W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.065 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
1.6V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDT452APTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDT452AP
Manufacturer:
FSC
Quantity:
30 000
Company:
Part Number:
NDT452AP
Manufacturer:
FSC
Quantity:
5 000
Part Number:
NDT452AP
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
rr
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 42
b. 95
c. 110
Scale 1 : 1 on letter size paper
JA
R
T
1a
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
JA
T
o
o
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
CA
A
t
C/W when mounted on a 1 in
C/W when mounted on a 0.066 in
o
C/W when mounted on a 0.0123 in
is determined by the user's board design.
R
JC
T
J
R
T
A
C A
t
I
2
D
t
2
pad of 2oz copper.
R
2
(T
DS ON
pad of 2oz copper.
2
A
pad of 2oz copper.
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
V
GS
GS
= 0 V, I
= 0 V, I
F
S
= -2.5 A, dI
= -2.5 A
(Note 2)
F
/dt = 100 A/µs
1c
Min
-0.85
Typ
Max
-2.5
-1.2
100
JC
is guaranteed by
NDT452AP Rev. B1
Units
ns
A
V