NDT452AP Fairchild Semiconductor, NDT452AP Datasheet - Page 4
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NDT452AP
Manufacturer Part Number
NDT452AP
Description
MOSFET P-CH 30V 5A SOT-223-4
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.NDT452AP.pdf
(7 pages)
Specifications of NDT452AP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 15V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.065Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
5A
Power Dissipation
3W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.065 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
1.6V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDT452APTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDT452AP
Manufacturer:
FSC
Quantity:
30 000
Company:
Part Number:
NDT452AP
Manufacturer:
FSC
Quantity:
5 000
Part Number:
NDT452AP
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Electrical Characteristics
-20
-15
-10
-5
0
-20
-15
-10
1.6
1.4
1.2
0.8
0.6
-1
-5
Figure 3. On-Resistance Variation with
0
1
-50
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
DS
V
GS
Temperature.
V
= -10V
I
-25
D
= -10V
GS
= -5.0A
-2
= -10V
V
GS
-1
V
0
T , JUNCTION TEMPERATURE (°C)
J
DS
, GATE TO SOURCE VOLTAGE (V)
-6.0
, DRAIN-SOURCE VOLTAGE (V)
2 5
-3
-5.0
T
-4.5
J
-2
5 0
= -55°C
-4
-4.0
7 5
-3.5
1 0 0
-3
125°C
-5
-3.0
25°C
1 2 5
1 5 0
-6
-4
1.2
1.1
0.9
0.8
0.7
0.6
1.5
0.5
Figure 4. On-Resistance Variation with Drain
2.5
1.5
0.5
1
2
1
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
-50
3
2
1
0
0
V
Current and Temperature.
GS
Temperature.
Voltage and Drain Current.
-25
= -10V
V
GS
-4
-4
= -3.5V
0
T , JUNCTION TEMPERATURE (°C)
J
I
D
I
D
2 5
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
-8
-8
- 4.0
5 0
T = 125°C
J
-12
-12
-4.5
7 5
-5.0
I
V
25°C
100
D
DS
= -250µA
-16
-16
-6.0
= V
-55°C
NDT452AP Rev. B1
-10
GS
125
-20
150
-20