NDT452AP Fairchild Semiconductor, NDT452AP Datasheet - Page 4

• Manufacturer Part Number: NDT452AP
• Description: MOSFET P-CH 30V 5A SOT-223-4
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDT452AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 5A
• Power Dissipation: 3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT452APTR

Typical Electrical Characteristics
-20
-15
-10
-5
0
-20
-15
-10
1.6
1.4
1.2
0.8
0.6
-1
-5
Figure 3. On-Resistance Variation with
0
1
-50
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
DS
V
GS
Temperature.
V
= -10V
I
-25
D
= -10V
GS
= -5.0A
-2
= -10V
V
GS
-1
V
0
T , JUNCTION TEMPERATURE (°C)
J
DS
, GATE TO SOURCE VOLTAGE (V)
-6.0
, DRAIN-SOURCE VOLTAGE (V)
2 5
-3
-5.0
T
-4.5
J
-2
5 0
= -55°C
-4
-4.0
7 5
-3.5
1 0 0
-3
125°C
-5
-3.0
25°C
1 2 5
1 5 0
-6
-4
1.2
1.1
0.9
0.8
0.7
0.6
1.5
0.5
Figure 4. On-Resistance Variation with Drain
2.5
1.5
0.5
1
2
1
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
-50
3
2
1
0
0
V
Current and Temperature.
GS
Temperature.
Voltage and Drain Current.
-25
= -10V
V
GS
-4
-4
= -3.5V
0
T , JUNCTION TEMPERATURE (°C)
J
I
D
I
D
2 5
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
-8
-8
- 4.0
5 0
T = 125°C
J
-12
-12
-4.5
7 5
-5.0
I
V
25°C
100
D
DS
= -250µA
-16
-16
-6.0
= V
-55°C
NDT452AP Rev. B1
-10
GS
125
-20
150
-20