NDT452AP Fairchild Semiconductor, NDT452AP Datasheet - Page 2

• Manufacturer Part Number: NDT452AP
• Description: MOSFET P-CH 30V 5A SOT-223-4
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDT452AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 5A
• Power Dissipation: 3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT452APTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GEN
DS
= -5.0 A, V
= 0 V, I
= -24 V, V
= 20 V, V
= -20 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -4.5 V, V
= -10 V, I
= -15 V, V
= -10 V, I
= -10 V,
= -10 V, R
GS
, I
D
D
= -250 µA
DS
= -250 µA
D
D
D
GS
GS
DS
DS
D
DS
GS
= -5.0 A
GEN
= -5.0 A
= 0 V
= 0 V
= -4.3 A
= -1 A,
= 0 V
= -10 V
= -5 V
= 0 V,
= -5 V
= 6
T
T
T
J
J
J
= 55°C
= 125°C
= 125°C
Min
-0.7
-30
-15
-1
-5
0.052
0.075
0.085
Typ
-1.6
-1.2
690
430
160
3.2
5.2
20
40
19
22
7
9
0.065
Max
-100
0.13
100
-2.8
-2.2
-10
0.1
20
30
50
40
30
-1
NDT452AP Rev. B1
Units
nC
nC
nC
µA
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S