NDT452AP Fairchild Semiconductor, NDT452AP Datasheet - Page 2
![MOSFET P-CH 30V 5A SOT-223-4](/photos/5/46/54602/261-sot-223-4_sml.jpg)
NDT452AP
Manufacturer Part Number
NDT452AP
Description
MOSFET P-CH 30V 5A SOT-223-4
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.NDT452AP.pdf
(7 pages)
Specifications of NDT452AP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 15V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.065Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
5A
Power Dissipation
3W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.065 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
1.6V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDT452APTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDT452AP
Manufacturer:
FSC
Quantity:
30 000
Company:
Part Number:
NDT452AP
Manufacturer:
FSC
Quantity:
5 000
Part Number:
NDT452AP
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GEN
DS
= -5.0 A, V
= 0 V, I
= -24 V, V
= 20 V, V
= -20 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -4.5 V, V
= -10 V, I
= -15 V, V
= -10 V, I
= -10 V,
= -10 V, R
GS
, I
D
D
= -250 µA
DS
= -250 µA
D
D
D
GS
GS
DS
DS
D
DS
GS
= -5.0 A
GEN
= -5.0 A
= 0 V
= 0 V
= -4.3 A
= -1 A,
= 0 V
= -10 V
= -5 V
= 0 V,
= -5 V
= 6
T
T
T
J
J
J
= 55°C
= 125°C
= 125°C
Min
-0.7
-30
-15
-1
-5
0.052
0.075
0.085
Typ
-1.6
-1.2
690
430
160
3.2
5.2
20
40
19
22
7
9
0.065
Max
-100
0.13
100
-2.8
-2.2
-10
0.1
20
30
50
40
30
-1
NDT452AP Rev. B1
Units
nC
nC
nC
µA
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S