HUF76639S3ST Fairchild Semiconductor, HUF76639S3ST Datasheet - Page 2

• Manufacturer Part Number: HUF76639S3ST
• Description: MOSFET N-CH 100V 50A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76639S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 50 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Source to Drain Diode Specifications
©2001 Fairchild Semiconductor Corporation
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
PARAMETER
PARAMETER
T
GS
GS
C
= 25
= 4.5V)
= 10V)
SYMBOL
SYMBOL
o
V
r
Q
BV
t
t
Q
DS(ON)
C, Unless Otherwise Specified
t
t
d(OFF)
d(OFF)
C
C
GS(TH)
Q
R
R
I
I
d(ON)
t
d(ON)
t
g(TOT)
C
Q
Q
GSS
t
t
Q
V
DSS
OFF
OFF
g(TH)
OSS
ON
ON
RSS
g(5)
ISS
t
DSS
t
t
t
t
SD
RR
gs
gd
r
r
rr
JC
f
f
JA
I
I
V
V
V
V
I
I
I
TO-220 and TO-263
V
V
(Figures 15, 21, 22)
V
V
(Figures 16, 21, 22)
V
V
V
V
f = 1MHz
(Figure 13)
I
I
I
I
D
D
D
D
D
SD
SD
SD
SD
DS
DS
GS
GS
DD
GS
DD
GS
GS
GS
GS
DS
= 250 A, V
= 250 A, V
= 51A, V
= 35A, V
= 34A, V
= 35A
= 15A
= 35A, dI
= 35A, dI
= 95V, V
= 90V, V
= 25V, V
= 16V
= V
= 50V, I
= 50V, I
= 0V to 10V
= 0V to 5V
= 0V to 1V
4.5V, R
10V, R
DS
, I
GS
GS
GS
D
D
D
SD
SD
GS
GS
GS
GS
GS
GS
GS
= 10V (Figures 9, 10)
= 5V (Figure 9)
= 4.5V (Figure 9)
= 34A
= 51A
TEST CONDITIONS
= 250 A (Figure 11)
TEST CONDITIONS
/dt = 100A/ s
/dt = 100A/ s
= 0V
= 0V, T
= 0V,
= 12
= 0V , T
= 0V (Figure 12)
= 12
V
I
I
(Figures 14, 19, 20)
D
g(REF)
C
DD
C
= 35A,
= 150
= -40
= 50V,
= 1.0mA
o
o
C
C (Figure 12)
MIN
100
MIN
90
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUF76639P3, HUF76639S3S Rev. B
0.023
0.024
0.025
2400
TYP
207
136
151
110
520
140
TYP
2.0
17
83
10
55
71
39
19
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.026
0.027
0.028
MAX
MAX
0.83
1.25
250
336
328
392
137
503
2.4
1.0
100
62
96
86
47
1
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
o
o
C/W
C/W
nA
nC
nC
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A
A