HUF76639S3ST Fairchild Semiconductor, HUF76639S3ST Datasheet - Page 9

• Manufacturer Part Number: HUF76639S3ST
• Description: MOSFET N-CH 100V 50A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76639S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 50 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV 26 July 1999
HUF76639T
CTHERM1 th 6 3.2e-3
CTHERM2 6 5 8.5e-3
CTHERM3 5 4 1.2e-2
CTHERM4 4 3 1.6e-2
CTHERM5 3 2 5.5e-2
CTHERM6 2 tl 1.5
RTHERM1 th 6 8.0e-3
RTHERM2 6 5 6.8e-2
RTHERM3 5 4 9.2e-2
RTHERM4 4 3 2.0e-1
RTHERM5 3 2 2.4e-1
RTHERM6 2 tl 5.2e-2
SABER Thermal Model
SABER thermal model HUF76639T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 3.2e-3
ctherm.ctherm2 6 5 = 8.5e-3
ctherm.ctherm3 5 4 = 1.2e-2
ctherm.ctherm4 4 3 = 1.6e-2
ctherm.ctherm5 3 2 = 5.5e-2
ctherm.ctherm6 2 tl = 1.5
rtherm.rtherm1 th 6 = 8.0e-3
rtherm.rtherm2 6 5 = 6.8e-2
rtherm.rtherm3 5 4 = 9.2e-2
rtherm.rtherm4 4 3 = 2.0e-1
rtherm.rtherm5 3 2 = 2.4e-1
rtherm.rtherm6 2 tl = 5.2e-2
}
©2001 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM3
RTHERM6
RTHERM1
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM3
CTHERM6
CTHERM1
CTHERM4
HUF76639P3, HUF76639S3S Rev. B