HUF76639S3ST Fairchild Semiconductor, HUF76639S3ST Datasheet - Page 4

• Manufacturer Part Number: HUF76639S3ST
• Description: MOSFET N-CH 100V 50A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76639S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 50 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
300
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
10
75
50
25
1
0
40
35
30
25
20
1.5
1
FIGURE 7. TRANSFER CHARACTERISTICS
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
T
DD
I
C
T
D
J
VOLTAGE AND DRAIN CURRENT
= 25
= 15V
= 15A
= 25
o
V
2.0
C
o
V
DS
I
V
C
D
GS
GS
= 51A
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
4
, GATE TO SOURCE VOLTAGE (V)
I
T
D
J
= 35A
= 175
2.5
10
T
SINGLE PULSE
o
J
C
= MAX RATED
T
6
J
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= -55
T
3.0
C
= 25
o
C
(Continued)
o
C
8
100
3.5
100 s
1ms
10ms
300
4.0
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
500
100
75
50
25
10
0
1
3.0
2.5
2.0
1.5
1.0
0.5
0.01
0
FIGURE 8. SATURATION CHARACTERISTICS
-80
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
GS
V
V
CAPABILITY
RESISTANCE vs JUNCTION TEMPERATURE
GS
GS
If R = 0
t
If R
t
AV
AV
= 10V
-40
= 5V
= 4V
V
= (L)(I
= (L/R)ln[(I
1
DS
0
T
0.1
J
t
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
AV
AS
, TIME IN AVALANCHE (ms)
0
)/(1.3*RATED BV
AS
2
STARTING T
*R)/(1.3*RATED BV
40
1
HUF76639P3, HUF76639S3S Rev. B
STARTING T
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
80
T
C
3
DSS
J
= 25
= 150
V
GS
- V
120
o
C
DSS
V
DD
o
V
10
= 10V, I
GS
J
C
GS
o
)
C)
= 25
- V
= 3.5V
4
= 3V
160
DD
o
D
C
= 51A
) +1]
100
200
5