RFP50N06 Fairchild Semiconductor, RFP50N06 Datasheet - Page 3

• Manufacturer Part Number: RFP50N06
• Description: MOSFET N-CH 60V 50A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP50N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 20V
• Input Capacitance (ciss) @ Vds: 2020pF @ 25V
• Power - Max: 131W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 131000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
400
100
1.2
1.0
0.8
0.6
0.4
0.2
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
1
0
1
0
0.01
0.1
2
1
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
TEMPERATURE
25
-5
0.05
0.02
0.01
0.5
0.2
0.1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
50
C
SINGLE PULSE
, CASE TEMPERATURE (
DS(ON)
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
10
100
V
DSS(MAX)
Unless Otherwise Specified
125
T
o
J
C)
SINGLE PULSE
= 60V
= MAX RATED
10
T
150
-3
C
= 25
t
1
100ms
100µs
10ms
, RECTANGULAR PULSE DURATION (s)
1ms
DC
o
C
175
100
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
10
10
40
3
2
60
50
40
30
20
10
0
10
V
25
-3
V
GS
GS
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FIGURE 5. PEAK CURRENT CAPABILITY
= 20V
= 10V
10
CASE TEMPERATURE
-2
50
10
-1
10
T
C
-1
, CASE TEMPERATURE (
t, PULSE WIDTH (ms)
75
NOTES:
DUTY FACTOR: D = t
PEAK T
FOR TEMPERATURES ABOVE 25
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
10
RFG50N06, RFP50N06, RF1S50N06SM Rev. B
0
J
100
= P
I
10
10
P
DM
=
DM
0
1
I 25
x Z



125
θJC
1
t
175 T C
----------------------- -
10
1
/t
o
2
x R
150
C)
t
2
2
–
θJC
T
150



C
10
+ T
= 25
3
C
o
10
C
o
1
C
175
10
4