RFP50N06 Fairchild Semiconductor, RFP50N06 Datasheet - Page 4

• Manufacturer Part Number: RFP50N06
• Description: MOSFET N-CH 60V 50A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP50N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 20V
• Input Capacitance (ciss) @ Vds: 2020pF @ 25V
• Power - Max: 131W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 131000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
NOTE: Refer to Fairchild Application Notes 9321 and 9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
125
100
300
100
75
50
25
2.0
1.5
1.0
0.5
10
0
1
0
0.01
0
-80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
FIGURE 8. TRANSFER CHARACTERISTICS
If R = 0
t
If R ≠ 0
t
AV
AV
V
DD
GS
1
= (L) (I
= (L/R) ln [(I
STARTING T
= 15V
JUNCTION TEMPERATURE
= V
-40
DS
V
2
AS
GS
T
, I
J
) / (1.3 RATED BV
D
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
t
AV,
= 250µA
3
AS
0
J
0.1
*R) / (1.3 RATED BV
TIME IN AVALANCHE (ms)
= 150
4
STARTING T
o
40
C
5
DSS
-55
80
6
J
- V
o
C
= 25
DD
DSS
1
Unless Otherwise Specified (Continued)
7
)
120
o
C
- V
o
C)
DD
25
8
) + 1]
o
175
C
160
9
o
C
200
10
10
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
125
100
75
50
25
2.5
2.0
1.5
1.0
0.5
0
2.0
1.5
1.0
0.5
0
0
0
-80
-80
FIGURE 7. SATURATION CHARACTERISTICS
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
V
V
GS
GS
I
D
= 250µA
= 10V, I
RESISTANCE vs JUNCTION TEMPERATURE
VOLTAGE vs JUNCTION TEMPERATURE
= 10V
-40
-40
1.5
V
DS
T
T
D
J
J
, DRAIN TO SOURCE VOLTAGE (V)
= 50A
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
0
0
V
GS
3.0
RFG50N06, RFP50N06, RF1S50N06SM Rev. B
= 8V
40
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
80
80
C
4.5
= 25
o
120
120
C
V
V
V
V
o
o
GS
GS
GS
GS
C)
C)
6.0
= 7V
= 6V
= 5V
= 4V
160
160
200
200
7.5