FDPF8N50NZ Fairchild Semiconductor, FDPF8N50NZ Datasheet

MOSFET N-CH 500V 8A TO220F

FDPF8N50NZ

Manufacturer Part Number
FDPF8N50NZ
Description
MOSFET N-CH 500V 8A TO220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF8N50NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
735pF @ 25V
Power - Max
40.3W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.77 Ohms
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
8 A
Power Dissipation
40.3 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev.A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP8N50NZ / FDPF8N50NZ
N-Channel MOSFET
500V, 8A, 0.85
Features
• R
• Low Gate Charge ( Typ. 14nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.77 ( Typ.) @ V
( Typ. 5pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
T
= 4A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
G
D
o
C)
S
C
C
= 25
= 100
1
o
C
TO-220F
FDPF Series
(potted)
o
This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
Description
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP8N50NZ FDPF8N50NZ
FDP8N50NZ FDPF8N50NZ
0.96
62.5
130
4.8
0.5
G
G
32
8
1
-55 to +150
500
±25
122
300
13
10
8
62.5
40.3
4.8*
32*
3.1
0.3
UniFET
8*
D
D
S
S
-
www.fairchildsemi.com
March 2010
switching
Units
o
Units
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDPF8N50NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev.A Description = 10V This N-Channel enhancement mode power field effect transistors D are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... Starting 8A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDP8N50NZ / FDPF8N50NZ Rev.A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 1200 C iss = oss = oss C rss = C gd 900 C iss 600 300 C rss 0 0 Drain-Source Voltage [V] DS FDP8N50NZ / FDPF8N50NZ Rev.A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note: T ...

Page 4

... Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FDP8N50NZ / FDPF8N50NZ Rev.A (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 *Notes: 0  250 ...

Page 5

... Transient Thermal Response Curve - FDP8N50NZ 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. Figure 13. Transient Thermal Response Curve - FDPF8N50NZ 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP8N50NZ / FDPF8N50NZ Rev ...

Page 6

... FDP8N50NZ / FDPF8N50NZ Rev.A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP8N50NZ / FDPF8N50NZ Rev.A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP8N50NZ / FDPF8N50NZ Rev.A TO-220 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP8N50NZ / FDPF8N50NZ Rev.A TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8N50NZ / FDPF8N50NZ Rev.A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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