FDPF8N50NZ Fairchild Semiconductor, FDPF8N50NZ Datasheet - Page 5

• Manufacturer Part Number: FDPF8N50NZ
• Description: MOSFET N-CH 500V 8A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF8N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 735pF @ 25V
• Power - Max: 40.3W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.77 Ohms
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 8 A
• Power Dissipation: 40.3 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8N50NZ / FDPF8N50NZ Rev.A
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve - FDP8N50NZ
0.01
0.01
Figure 13. Transient Thermal Response Curve - FDPF8N50NZ
0.1
0.1
1
2
1
5
10
10
0.05
0.05
0.5
0.02
0.5
0.2
0.1
0.01
Single pulse
-5
0.2
0.02
0.01
Single pulse
-5
0.1
10
-4
10
-4
10
-3
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
10
(Continued)
10
-2
-3
10
-1
5
10
-2
1
*Notes:
*Notes:
P
P
1. Z
2. Duty Factor, D= t
3. T
1. Z
2. Duty Factor, D= t
3. T
DM
DM

JM

JM
JC
JC
10
(t) = 3.1
- T
(t) = 0.96
- T
10
C
C
t
t
1
1
= P
= P
t
-1
t
2
2
o
DM
DM
C/W Max.
o
10
C/W Max.
* Z
* Z
2
1
1

/t
/t

JC
JC
2
2
(t)
(t)
10
1
3
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