HUF75645P3 Fairchild Semiconductor, HUF75645P3 Datasheet - Page 9

• Manufacturer Part Number: HUF75645P3
• Description: MOSFET N-CH 100V 75A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75645P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 238nC @ 20V
• Input Capacitance (ciss) @ Vds: 3790pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV 28 July 1999
HUF75645T
CTHERM1 th 6 8.80e-3
CTHERM2 6 5 2.50e-2
CTHERM3 5 4 2.70e-2
CTHERM4 4 3 3.70e-2
CTHERM5 3 2 4.40e-2
CTHERM6 2 tl 3.40e-1
RTHERM1 th 6 1.20e-2
RTHERM2 6 5 3.00e-2
RTHERM3 5 4 4.30e-2
RTHERM4 4 3 8.80e-2
RTHERM5 3 2 9.90e-2
RTHERM6 2 tl 1.10e-1
SABER Thermal Model
SABER thermal model HUF75645T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 8.80e-3
ctherm.ctherm2 6 5 = 2.50e-2
ctherm.ctherm3 5 4 = 2.70e-2
ctherm.ctherm4 4 3 = 3.70e-2
ctherm.ctherm5 3 2 = 4.40e-2
ctherm.ctherm6 2 tl = 3.40e-1
rtherm.rtherm1 th 6 = 1.20e-2
rtherm.rtherm2 6 5 = 3.00e-2
rtherm.rtherm3 5 4 = 4.30e-2
rtherm.rtherm4 4 3 = 8.80e-2
rtherm.rtherm5 3 2 = 9.90e-2
rtherm.rtherm6 2 tl = 1.10e-1
}
©2001 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM3
RTHERM6
RTHERM1
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM3
CTHERM6
CTHERM1
CTHERM4
HUF75645P3, HUF75645S3S Rev. B