HUF75645P3 Fairchild Semiconductor, HUF75645P3 Datasheet - Page 9

MOSFET N-CH 100V 75A TO-220AB

HUF75645P3

Manufacturer Part Number
HUF75645P3
Description
MOSFET N-CH 100V 75A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75645P3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
238nC @ 20V
Input Capacitance (ciss) @ Vds
3790pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
310000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
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Part Number:
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Manufacturer:
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SPICE Thermal Model
REV 28 July 1999
HUF75645T
CTHERM1 th 6 8.80e-3
CTHERM2 6 5 2.50e-2
CTHERM3 5 4 2.70e-2
CTHERM4 4 3 3.70e-2
CTHERM5 3 2 4.40e-2
CTHERM6 2 tl 3.40e-1
RTHERM1 th 6 1.20e-2
RTHERM2 6 5 3.00e-2
RTHERM3 5 4 4.30e-2
RTHERM4 4 3 8.80e-2
RTHERM5 3 2 9.90e-2
RTHERM6 2 tl 1.10e-1
SABER Thermal Model
SABER thermal model HUF75645T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 8.80e-3
ctherm.ctherm2 6 5 = 2.50e-2
ctherm.ctherm3 5 4 = 2.70e-2
ctherm.ctherm4 4 3 = 3.70e-2
ctherm.ctherm5 3 2 = 4.40e-2
ctherm.ctherm6 2 tl = 3.40e-1
rtherm.rtherm1 th 6 = 1.20e-2
rtherm.rtherm2 6 5 = 3.00e-2
rtherm.rtherm3 5 4 = 4.30e-2
rtherm.rtherm4 4 3 = 8.80e-2
rtherm.rtherm5 3 2 = 9.90e-2
rtherm.rtherm6 2 tl = 1.10e-1
}
©2001 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM3
RTHERM6
RTHERM1
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM3
CTHERM6
CTHERM1
CTHERM4
HUF75645P3, HUF75645S3S Rev. B

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