BSO613SPV G Infineon Technologies, BSO613SPV G Datasheet

BSO613SPV G

Manufacturer Part Number

BSO613SPV G

Description

MOSFET P-CH 60V 3.44A DSO-8

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BSO613SPV_G.pdf (9 pages)

Specifications of BSO613SPV G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

130 mOhm @ 3.44A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

3.44A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

875pF @ 25V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

DSO-8

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.13 Ohms

Drain-source Breakdown Voltage

- 60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

3.44 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Package

SO-8

Vds (max)

-60.0 V

Rds (on) (max) (@10v)

130.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

BSO613SPVGT
BSO613SPVGXT
SP000216309

Current page: 1 of 9
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Rev.1.3

SIPMOS

Features

Type

BSO613SPV G

Maximum Ratings,at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode d v /d t

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Enhancement mode

jmax

P-Channel

Avalanche rated

d v /d t rated

= -3.44 A, V

= -3.44 A , V

= 25 °C

= 150 °C

Power-Transistor

= -48 V, d i /d t = 200 A/µs,

= -25 V, R

Package

PG-SO 8

= 25 °C, unless otherwise specified

= 25

Product Summary

Drain source voltage

Drain-source on-state resistance

Continuous drain current

Lead free

Yes

jmax

Page 1

Symbol

d v /d t

D puls

j ,

tot

stg

Top View

SIS00062

-55... +150

55/150/56

Value

-3.44

-13.8

0.25

150

±20

DS(on)

2.5

BSO613SPV G

2007-03-02

-3.44

0.13

-60

Unit

kV/µs

°C

Related parts for BSO613SPV G

BSO613SPV G Summary of contents

Page 1

... A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.3 Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current Lead free Yes = 25 °C, unless otherwise specified Symbol puls jmax Page 1 BSO613SPV DS(on Top View SIS00062 Value -3.44 -13.8 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.3 Symbol sec. £ °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 ° 125 ° GSS R DS(on) Page 2 BSO613SPV G Values min. typ. max thJS thJA - - - - Values min. typ. max. - -0.1 - -10 -100 - -10 ...

Page 3

... - 2 Rise time Turn-off delay time Fall time Rev.1 °C, unless otherwise specified j Symbol -3. d(on) = -3. -3. d(off) = -3. -3. Page 3 BSO613SPV G Values min. typ. max. 2.2 4.4 - 700 iss - 235 oss - 95 rss - Unit - S 875 pF 295 120 2007-03-02 ...

Page 4

... A Inverse diode forward voltage -3. Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Rev.1 °C, unless otherwise specified j Symbol - (plateau) Symbol Page 4 BSO613SPV G Values Unit min. typ. max. - 1.6 2 -3. Values Unit min. typ. max -3. -13.8 - -0.87 -1. 2007-03-02 ...

Page 5

... Rev.1.3 Drain current parameter: V -3.8 A -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 °C 100 120 160 T A Transient thermal impedance Z thJC parameter : K 550.0µ -10 - Page 5 BSO613SPV ³ GS BSO613SPV 100 120 = BSO613SPV single pulse - 2007-03-02 °C 160 0.50 0.20 ...

Page 6

... V -5.0 0 Typ. forward transconductance = parameter Page 6 BSO613SPV BSO613SPV [ -3.5 -3.7 -4.0 -4.2 -4.5 -4.7 -5.0 -5.5 -10.0 -1.0 -2.0 -3.0 -4.0 -5 =25° 2007-03- -7.0 I ...

Page 7

... T j Forward characteristics of reverse diode parameter -10 A -10 C iss C oss -10 C rss -10 V -25 -30 - Page 7 BSO613SPV -60 - 100 ) µs p BSO613SPV °C typ 150 °C typ °C (98 150 °C (98 0.0 -0.4 -0.8 -1 ...

Page 8

... AS j para -3. - 160 mJ 120 100 105 Drain-source breakdown voltage (BR)DSS j BSO613SPV -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 - Rev.1.3 Typ. gate charge parameter -16 V -12 - 125 165 0 ° °C 100 180 T j Page 8 BSO613SPV G ) Gate = -3.44 A pulsed D BSO613SPV 0 max 2003-03-02 DS max Gate ...

Page 9

... Rev.1.3 Page 9 BSO613SPV G 2007-03-02 ...

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