BSO613SPV G Infineon Technologies, BSO613SPV G Datasheet - Page 8
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BSO613SPV G
Manufacturer Part Number
BSO613SPV G
Description
MOSFET P-CH 60V 3.44A DSO-8
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSO613SPV_G.pdf
(9 pages)
Specifications of BSO613SPV G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 3.44A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.44A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
875pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.44 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SO-8
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
130.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO613SPVGT
BSO613SPVGXT
SP000216309
BSO613SPVGXT
SP000216309
Avalanche energy
E
para.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
Rev.1.3
mJ
160
120
100
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
80
60
40
20
0
-60
25
D
BSO613SPV
= -3.44 A , V
= f ( T
j
)
45
-20
j
)
65
20
85
DD
60
105
= -25 V, R
100
125
°C
°C
GS
T
T
j
j
= 25
165
180
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0
BSO613SPV
4
Gate
D
0,2
= -3.44 A pulsed
)
8
V
DS max
12
16
BSO613SPV G
20
0,8
2003-03-02
V
DS max
24
nC
Q
Gate
30