BSO613SPV G Infineon Technologies, BSO613SPV G Datasheet - Page 8

• Manufacturer Part Number: BSO613SPV G
• Description: MOSFET P-CH 60V 3.44A DSO-8
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO613SPV G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.44A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.44 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO613SPVGT; BSO613SPVGXT; SP000216309

Avalanche energy
E
para.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
Rev.1.3
mJ
160
120
100
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
80
60
40
20
0
-60
25
D
BSO613SPV
= -3.44 A , V
= f ( T
j
)
45
-20
j
)
65
20
85
DD
60
105
= -25 V, R
100
125
°C
°C
GS
T
T
j
j
= 25
165
180
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0
BSO613SPV
4
Gate
D
0,2
= -3.44 A pulsed
)
8
V
DS max
12
16
BSO613SPV G
20
0,8
2003-03-02
V
DS max
24
nC
Q
Gate
30