BSO613SPV G Infineon Technologies, BSO613SPV G Datasheet - Page 7

• Manufacturer Part Number: BSO613SPV G
• Description: MOSFET P-CH 60V 3.44A DSO-8
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO613SPV G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.44A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.44 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO613SPVGT; BSO613SPVGXT; SP000216309

Drain-source on-state resistance
R
parameter : I
Typ. capacitances
C = f ( V
parameter: V
Rev.1.3
DS(on)
pF
W
0.34
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
10
10
10
10
-60
4
3
2
1
0
BSO613SPV
DS
= f ( T
)
-5
-20
D
GS
j
)
-10
= -3.44 A, V
=0V, f =1 MHz
20
98%
-15
typ
-20
60
GS
-25
100
= -10 V
-30
C
C
C
°C
iss
oss
rss
V
T
V
j
DS
180
-40
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-5.0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
V
A
0.0
-1
-60
0.0
2
1
0
BSO613SPV
= f ( T j )
SD
-0.4
)
-20
GS
-0.8
p
= V
20
= 80 µs
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
60
-1.6
D
= 1 mA
BSO613SPV G
-2.0
100
2007-03-02
-2.4
°C
V
V
T
98%
typ.
2%
SD
j
-3.0
180