BSO613SPV G Infineon Technologies, BSO613SPV G Datasheet - Page 9

• Manufacturer Part Number: BSO613SPV G
• Description: MOSFET P-CH 60V 3.44A DSO-8
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO613SPV G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.44A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.44 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO613SPVGT; BSO613SPVGXT; SP000216309

BSO613SPV G
Rev.1.3
Page 9
2007-03-02