BSP613P L6327 Infineon Technologies, BSP613P L6327 Datasheet

MOSFET P-CH 60V 2.9A SOT-223

BSP613P L6327

Manufacturer Part Number
BSP613P L6327
Description
MOSFET P-CH 60V 2.9A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP613P_L6327.pdf (8 pages)

Specifications of BSP613P L6327

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
875pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.9 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSP613P L6327
BSP613PL6327INTR
BSP613PL6327XT
SP000089224
Rev.2.4
Feature
SIPMOS
Type
BSP613P
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
A
A
A
A
P-Channel
Enhancement mode
Avalanche rated
dv/dt rated
Ideal for fast switching buck converter
=2.9A, V
=2.9 A , V
=25°C
=70°C
=25°C
=25°C
DS
DD
=-48V, di/dt=-200A/µs, T
=-25V, R
Small-Signal-Transistor
GS
Package
PG-SOT-223
=25
j
= 25 °C, unless otherwise specified
jmax
=150°C
jmax
Tape and reel
L6327: 1000pcs/r.
Page 1
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
-55... +150
55/150/56
Product Summary
V
R
I
D
Value
-11.6
DS
-2.9
DS(on)
-2.3
0.18
±20
150
1.8
6
PG-SOT-223
Gate
pin1
2007-02-08
0.13
BSP613P
-60
-2.9
Unit
A
mJ
kV/µs
V
W
°C
Source
pin 3
Drain
pin 2,4
V
A

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BSP613P L6327 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Avalanche rated dv/dt rated Ideal for fast switching buck converter Type Package BSP613P PG-SOT-223 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T =25°C ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power Dissipation tot A BSP613P 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area ...

Page 5

Typ. output characteristic parameter =25° Vgs = 5V 6 5.5 Vgs = 10V 5 4.5 4 Vgs = 6V 3.5 3 2.5 2 1.5 1 Vgs=3.5V 0.5 0 ...

Page 6

Drain-source on-state resistance DS(on) j parameter : BSP613P 0.34 W 0.28 0.24 0.20 0.16 98% 0.12 typ 0.08 0.04 0.00 -60 - Typ. ...

Page 7

Typ. avalanche energy par 2 - 160 m J 120 100 105 15 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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