BSP613P L6327 Infineon Technologies, BSP613P L6327 Datasheet - Page 4
![MOSFET P-CH 60V 2.9A SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP613P L6327
Manufacturer Part Number
BSP613P L6327
Description
MOSFET P-CH 60V 2.9A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP613P_L6327.pdf
(8 pages)
Specifications of BSP613P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
875pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.9 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSP613P L6327
BSP613PL6327INTR
BSP613PL6327XT
SP000089224
BSP613PL6327INTR
BSP613PL6327XT
SP000089224
Rev.2.4
1 Power Dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
= f (
10
10
10
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
1
0
-1
-2
2
1
0
-10
0
BSP613P
BSP613P
T
DS
A
-1
)
20
)
40
-10
60
A
0
= 25 °C
80
100
-10
120
1
°C
V
DC
T
V
t
p = 100.0
A
DS
160
1 ms
10 ms
-10
2
Page 4
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter: D = t
D
thJC
= f (
K/W
10
10
10
10
10
10
10
10
3.2
2.4
1.6
1.2
0.8
0.4
A
= f(t
T
2
0
-1
-2
-3
-4
-5
2
1
0
10
0
A
BSP613P
BSP613P
)
-7
p
)
20
10
single pulse
GS
-6
40
p
10
10 V
/ T
-5
60
10
-4
80
10
100
-3
10
2007-02-08
120
BSP613P
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0