BSP613P Infineon Technologies, BSP613P Datasheet

MOSFET P-CH 60V 2.9A SOT-223

BSP613P

Manufacturer Part Number
BSP613P
Description
MOSFET P-CH 60V 2.9A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSP613P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
875pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Package
SOT-223
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
130.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP613PT
SP000012301

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP613P
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSP613P
0
Company:
Part Number:
BSP613P H6327
Quantity:
4 800
Part Number:
BSP613P L6327
Manufacturer:
INFINEON
Quantity:
1 317
Part Number:
BSP613PH6327
0
Part Number:
BSP613PH6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSP613PL6327
Manufacturer:
THOMBETT
Quantity:
4 092
Rev.2.4
Feature
SIPMOS
Type
BSP613P
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
A
A
A
A
P-Channel
Enhancement mode
Avalanche rated
dv/dt rated
Ideal for fast switching buck converter
=2.9A, V
=2.9 A , V
=25°C
=70°C
=25°C
=25°C
DS
DD
=-48V, di/dt=-200A/µs, T
=-25V, R
Small-Signal-Transistor
GS
Package
PG-SOT-223
=25
j
= 25 °C, unless otherwise specified
jmax
=150°C
jmax
Tape and reel
L6327: 1000pcs/r.
Page 1
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
-55... +150
55/150/56
Product Summary
V
R
I
D
Value
-11.6
DS
-2.9
DS(on)
-2.3
0.18
±20
150
1.8
6
PG-SOT-223
Gate
pin1
2007-02-08
0.13
BSP613P
-60
-2.9
Unit
A
mJ
kV/µs
V
W
°C
Source
pin 3
Drain
pin 2,4
V
A

Related parts for BSP613P

BSP613P Summary of contents

Page 1

... D puls E E jmax dv/dt =150°C jmax Page 1 Product Summary DS(on PG-SOT-223 Gate pin1 Value -2.9 -2.3 -11.6 150 AS 0. ±20 GS 1.8 tot T -55... +150 j , stg 55/150/56 BSP613P -60 V 0.13 -2.9 A Drain pin 2,4 Source pin 3 Unit A mJ kV/µ °C 2007-02-08 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.4 Symbol R thJS R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) Page 2 BSP613P Values Unit min. typ. max K/W - 100 - - - 100 - - 70 Values Unit min. typ. max. -60 - ...

Page 3

... V =-10V, d(on =2.9A d(off =-48V, I =2. =-48V, I =2.9A -10V GS V (plateau) V =-48V, I =2. =25° =0V =-30V /dt=100A/µ Page 3 BSP613P Values Unit min. typ. max. 2.7 5 715 875 pF - 230 295 - 90 120 - 6 2.5 3 8 -11.6 - -0 59.8 112 nC 2007-02-08 ...

Page 4

... A 2 BSP613P -10 -10 Rev.2.4 2 Drain current parameter: V 3.2 A 2.4 1.6 1.2 0.8 0.4 °C 100 120 160 Transient thermal impedance Z = f(t thJC parameter K 100 -10 - Page 4 BSP613P ) BSP613P 100 120 ) BSP613P single pulse - 2007-02-08 °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. transfer characteristics parameter ° Rev.2.4 6 Typ. drain-source on resistance R DS(on) parameter: V 0.5 0.4 0.35 Vgs = 4.5V 0.3 0.25 0.2 Vgs = 4V 0.15 0 -VDS 8 Typ. forward transconductance g = f(I DS(on)max fs parameter ° Page 5 BSP613P = °C GS Vgs = 4V Vgs = 4,5V Vgs = 5V Vgs = 6V Vgs = 10V 2007-02- ...

Page 6

... V -25 -30 - Page 6 BSP613P = 98% typ 2% -60 -60 -60 -60 -20 -20 -20 - 100 100 100 100 ) µs p BSP613P °C typ 150 °C typ °C (98 150 °C (98%) j 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 2007-02-08 °C °C °C °C 180 180 180 180 -2.4 -3.0 V ...

Page 7

... Typ. avalanche energy par 2 - 160 m J 120 100 105 15 Drain-source breakdown voltage (BR)DSS j BSP613P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 - Rev.2.4 14 Typ. gate charge ºC 125 165 °C 100 180 T j Page 7 BSP613P ), parameter ° 2.9 A pulsed; D BSP613P 0 max 0 max 2007-02- ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 Page 8 BSP613P 2007-02-08 ...

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