BSP613P Infineon Technologies, BSP613P Datasheet - Page 7
![MOSFET P-CH 60V 2.9A SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP613P
Manufacturer Part Number
BSP613P
Description
MOSFET P-CH 60V 2.9A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP613P_L6327.pdf
(8 pages)
Specifications of BSP613P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
875pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Package
SOT-223
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
130.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP613PT
SP000012301
SP000012301
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSP613P
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
BSP613P L6327
Manufacturer:
INFINEON
Quantity:
1 317
Part Number:
BSP613PH6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSP613PL6327
Manufacturer:
THOMBETT
Quantity:
4 092
Rev.2.4
13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
m J
160
120
100
= f (T
-72
-68
-66
-64
-62
-60
-58
-56
-54
V
80
60
40
20
D
0
-60
25
= 2.9 A , V
BSP613P
= f (T
j
)
45
-20
j
)
65
20
DD
85
= -25 V, R
60
105
100
125
GS
= 25
°C
ºC
T
T
j
j
165
180
Page 7
14 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP613P
0.2 V
0.8 V
G
4
DS max
DS max
), parameter: V
8
I
D
= 2.9 A pulsed;
12
16
20
DS ;
24
2007-02-08
T j = 25 °C
BSP613P
28 nC
|Q
G
|
34