BSP613P Infineon Technologies, BSP613P Datasheet - Page 7

• Manufacturer Part Number: BSP613P
• Description: MOSFET P-CH 60V 2.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP613P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP613PT; SP000012301

Rev.2.4
13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
m J
160
120
100
= f (T
-72
-68
-66
-64
-62
-60
-58
-56
-54
V
80
60
40
20
D
0
-60
25
= 2.9 A , V
BSP613P
= f (T
j
)
45
-20
j
)
65
20
DD
85
= -25 V, R
60
105
100
125
GS
= 25
°C
ºC
T
T
j
j
165
180
Page 7
14 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP613P
0.2 V
0.8 V
G
4
DS max
DS max
), parameter: V
8
I
D
= 2.9 A pulsed;
12
16
20
DS ;
24
2007-02-08
T j = 25 °C
BSP613P
28 nC
|Q
G
|
34