BSP613P Infineon Technologies, BSP613P Datasheet - Page 2

• Manufacturer Part Number: BSP613P
• Description: MOSFET P-CH 60V 2.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP613P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP613PT; SP000012301

Rev.2.4
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
=-1mA
=0, I
=-60V, V
=-60V, V
=-20V, V
=-10V, I
2
D
cooling area
=-250µA
D
GS
GS
DS
=2.9A
=0, T
=0, T
=0
j
j
=25°C
=125°C
1)
GS
= V
DS
j
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJS
thJA
thJA
min.
min.
-2.1
-60
-
-
-
-
-
-
-
-
Values
Values
-0.1
0.11
typ.
-10
typ.
100
-10
-3
-
-
-
-
max.
max.
-100
-100
0.13
100
70
19
2007-02-08
-4
-1
-
-
BSP613P
Unit
V
µA
nA
Unit
K/W