BSP613P Infineon Technologies, BSP613P Datasheet - Page 6
![MOSFET P-CH 60V 2.9A SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP613P
Manufacturer Part Number
BSP613P
Description
MOSFET P-CH 60V 2.9A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP613P_L6327.pdf
(8 pages)
Specifications of BSP613P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
875pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Package
SOT-223
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
130.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP613PT
SP000012301
SP000012301
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSP613P
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
BSP613P L6327
Manufacturer:
INFINEON
Quantity:
1 317
Part Number:
BSP613PH6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSP613PL6327
Manufacturer:
THOMBETT
Quantity:
4 092
9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f ( V
parameter: V
Rev.2.4
DS(on)
pF
W
0.34
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
10
10
10
10
-60
4
3
2
1
0
BSP613P
DS
= f ( T
)
-5
-20
D
GS
j
)
-10
= -2.9 A, V
=0V, f =1 MHz
20
-15
98%
-20
typ
60
GS
-25
100
= -10 V
-30
C
C
C
°C
iss
oss
rss
V
T
V
j
DS
180
-40
Page 6
12 Forward characteristics of reverse diode
I
parameter: T j , t
F
10 Gate threshold voltage
V
parameter: V
= f (V
-10
-10
-10
-10
GS(th)
-5.0
-5.0
-5.0
-5.0
V
V
V
V
-4.0
-4.0
-4.0
-4.0
-3.5
-3.5
-3.5
-3.5
-3.0
-3.0
-3.0
-3.0
-2.5
-2.5
-2.5
-2.5
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
A
0.0
0.0
0.0
0.0
-1
-60
-60
-60
-60
0.0
2
1
0
BSP613P
SD
= f ( T j )
-0.4
)
-20
-20
-20
-20
-0.8
GS
p
20
20
20
20
= 80 µs
= V
-1.2
T
T
T
T
j
j
j
j
DS
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
60
60
60
60
-1.6
98%
2%
, I
typ
D
= -1 mA
-2.0
100
100
100
100
2007-02-08
BSP613P
-2.4
°C
°C
°C
°C
V
V
T
T
T
T
SD
j
j
j
j
-3.0
180
180
180
180