BSP613P Infineon Technologies, BSP613P Datasheet - Page 4

• Manufacturer Part Number: BSP613P
• Description: MOSFET P-CH 60V 2.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP613P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP613PT; SP000012301

Rev.2.4
1 Power Dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
= f (
10
10
10
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
1
0
-1
-2
2
1
0
-10
0
BSP613P
BSP613P
T
DS
A
-1
)
20
)
40
-10
60
A
0
= 25 °C
80
100
-10
120
1
°C
V
DC
T
V
t
p = 100.0
A
DS
160
1 ms
10 ms
-10
2
Page 4
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter: D = t
D
thJC
= f (
K/W
10
10
10
10
10
10
10
10
3.2
2.4
1.6
1.2
0.8
0.4
A
= f(t
T
2
0
-1
-2
-3
-4
-5
2
1
0
10
0
A
BSP613P
BSP613P
)
-7
p
)
20
10
single pulse
GS
-6
40
p
10
10 V
/ T
-5
60
10
-4
80
10
100
-3
10
2007-02-08
120
BSP613P
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0