BSP613P L6327 Infineon Technologies, BSP613P L6327 Datasheet - Page 5
![MOSFET P-CH 60V 2.9A SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP613P L6327
Manufacturer Part Number
BSP613P L6327
Description
MOSFET P-CH 60V 2.9A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP613P_L6327.pdf
(8 pages)
Specifications of BSP613P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
875pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.9 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSP613P L6327
BSP613PL6327INTR
BSP613PL6327XT
SP000089224
BSP613PL6327INTR
BSP613PL6327XT
SP000089224
5 Typ. output characteristic
I
parameter: T j =25°C
7 Typ. transfer characteristics
I
parameter: T j = 25 °C
D
D
Rev.2.4
= f ( V
= f (V
5.5
4.5
3.5
2.5
1.5
0.5
A
A
7
6
5
4
3
2
1
0
8
6
5
4
3
2
1
0
0
0
DS
GS
0.5
)
); |V
Vgs = 10V
1
Vgs = 6V
1
DS |
1.5
2
2 x |I
Vgs = 5V
2
3
2.5
D |
x R
Vgs=3.5V
4
3
DS(on)max
3.5
Vgs = 4.5V
Vgs = 4V
5
4
V
-VDS
-V GS
V
7
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: T j = 25 °C
fs
DS(on)
= f(I
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
S
0
8
6
5
4
3
2
1
0
0
0
D
Vgs = 4V
= f (I
)
1
D
1
GS
)
2
; T j = 25 °C
3
2
Vgs = 4,5V
4
5
3
6
Vgs = 10V
4
7
2007-02-08
Vgs = 6V
Vgs = 5V
BSP613P
8
A
-I D
A
-I D
10
6