BSP613P L6327 Infineon Technologies, BSP613P L6327 Datasheet - Page 3

• Manufacturer Part Number: BSP613P L6327
• Description: MOSFET P-CH 60V 2.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP613P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP613P L6327; BSP613PL6327INTR; BSP613PL6327XT; SP000089224

Rev.2.4
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
j
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
= 25 °C, unless otherwise specified
d(on)
r
d(off)
f
S
SM
rr
fs
(plateau) V
SD
iss
oss
rss
gs
gd
g
rr
|V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
A
GS
DD
DD
DD
GS
DD
GS
R
F
DS
=2.9A
=2.9A, R
=25°C
/dt=100A/µs
=-30V, |I
Page 3
=0, V
=0 to -10V
=0V, |I
=-30V, V
=-48V, I
=-48V, I
=-48V, I
| 2*|I
Conditions
D
DS
G
F
|*R
F
| = |I
=2.7
=-25V,
D
D
D
| = |I
GS
=2.9A
=2.9A,
=2.9A
DS(on)max
=-10V,
S
S
|
|,
,
min.
2.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
37.2
59.8
typ.
715
230
-3.9
5.4
6.7
2.5
8.9
-0.8
90
26
22
9
7
-
-
2007-02-08
BSP613P
max.
-11.6
14.3
-2.9
875
295
120
112
3.8
-1.1
17
18
52
19
33
79
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC