SPU18P06P Infineon Technologies, SPU18P06P Datasheet

MOSFET P-CH 60V 18.6A TO-251

SPU18P06P

Manufacturer Part Number
SPU18P06P
Description
MOSFET P-CH 60V 18.6A TO-251
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPU18P06P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18.6A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000012303
SPU18P06P
SPU18P06PIN
SPU18P06PX
SPU18P06PXK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPU18P06P
Manufacturer:
INFINEON
Quantity:
12 500
SIPMOS
Features
·
·
·
·
·
Type
SPD18P06P
SPU18P06P
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
C
C
C
jmax
C
175°C operating temperature
P-Channel
Avalanche rated
d v /d t rated
= -18.6 A, V
= -18.6 A , V
Rev 3.1
= 25 °C
= 100 °C
= 25 °C
= 25 °C
= 175 °C
Power-Transistor
DS
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
Package
P-TO252-3
P-TO251-3
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
W
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
j ,
AS
AR
GS
tot
T
stg
Pin 1
-55...+175
55/175/56
G
V
R
I
Value
-18.6
-13.2
-74.4
D
DS
150
±20
DS(on)
80
8
6
SPD18P06P
SPU18P06P
PIN 2/4
D
2008-02-18
-18.6
0.13
-60
PIN 3
Unit
A
mJ
kV/µs
V
W
°C
S
V
W
A

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SPU18P06P Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev 3.1 Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current Symbol puls jmax tot stg Page 1 SPD18P06P SPU18P06P V - 0.13 DS(on -18 Pin 1 PIN 2/4 PIN Value Unit A -18.6 -13.2 -74.4 150 kV/µs ±20 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 3.1 Symbol °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 ° 150 ° GSS R DS(on) Page 2 SPD18P06P SPU18P06P Values min. typ. max thJC - - thJA thJA - - - - Values min. typ. max. - -0.1 - -10 ...

Page 3

... Rise time Turn-off delay time Fall time Rev 3 °C, unless otherwise specified j Symbol -13 d(on) = -13 -13 d(off) = -13 -13 Page 3 SPD18P06P SPU18P06P Values min. typ. max 690 iss - 230 oss - 95 rss - 12 - 5 Unit - S 860 pF 290 120 18 ns 8.7 37 16.5 2008-02-18 ...

Page 4

... Inverse diode forward voltage -18 Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Rev 3 °C, unless otherwise specified j Symbol - (plateau) Symbol Page 4 SPD18P06P SPU18P06P Values Unit min. typ. max. - 4 -5. Values Unit min. typ. max -18 -74 -1. 105 ns - 139 208 nC 2008-02-18 ...

Page 5

... Rev 3.1 Drain current parameter: V -20 A -16 -14 -12 - °C 190 Transient thermal impedance thJC parameter : 29.0µs K 100 µ -10 - Page 5 SPD18P06P SPU18P06P ) ³ GS SPD18P06P 100 120 140 160 ) SPD18P06P D = 0.50 single pulse - 2008-02-18 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 6

... - Typ. forward transconductance parameter - Page 6 SPD18P06P SPU18P06P = SPD18P06P [ -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8 -12 -16 -20 -24 -28 - =25° -10 -15 -20 2008-02- ...

Page 7

... T j Forward characteristics of reverse diode parameter -10 A -10 C iss C oss -10 C rss -10 V -25 - Page 7 SPD18P06P SPU18P06P = -60 - 100 ) µs p SPD18P06P °C typ 175 °C typ °C (98 175 °C (98 0.0 -0.4 -0 ...

Page 8

... Drain-source breakdown voltage (BR)DSS j SPD18P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 - Rev 3.1 Typ. gate charge V GS parameter -16 V -12 -10 125 145 °C 185 T j °C 100 140 200 T j Page 8 SPD18P06P SPU18P06P = Gate = -18.6 A pulsed D SPD18P06P V 0,2 DS max - 0,8 DS max Gate 2008-02-18 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 3.1 ). (www.infineon.com Page 9 SPD18P06P SPU18P06P 2008-02-18 ...

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