SPU18P06P Infineon Technologies, SPU18P06P Datasheet - Page 6

• Manufacturer Part Number: SPU18P06P
• Description: MOSFET P-CH 60V 18.6A TO-251
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPU18P06P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000012303; SPU18P06P; SPU18P06PIN; SPU18P06PX; SPU18P06PXK

Typ. output characteristic
I
parameter: t
Typ. transfer characteristics I
V
parameter: t
D
DS
Rev 3.1
= f ( V
A
³
-50
-40
-35
-30
-25
-20
-15
-10
-40
-30
-25
-20
-15
-10
A
-5
-5
0
0
2 x I
0
0
SPD18P06P
DS
P
tot
-1
-1
D
); T
= 80.00W
p
x R
p
-2
-2
= 80 µs
= 80 µs
j
=25°C
DS(on)max
-3
-3
l
-4
-4
j
k
-5
-5
-6
-6
i
g
e
c
a
-7
-7
h
f
d
b
V GS [V]
D
a
b
c
d
e
f
g
h
i
j
k
l
= f ( V
-8
-8
V
V
V
V
-10.0
-20.0
GS
DS
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-9.0
GS
-10
-10
)
Page 6
Typ. drain-source-on-resistance
R
parameter: V
Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f( I
0.42
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
W
S
10
8
7
6
5
4
3
2
1
0
0
0
D
V
SPD18P06P
-4.0
= f ( I
GS
a
); T
a
-4
[V] =
-4.5
b
-5
j
=25°C
D
fs
b
GS
-8
-5.0
)
c
c
-12 -16 -20 -24 -28 -32
-5.5
-10
d
-6.0
e
d
-6.5
-15
f
e
-7.0
g
SPD18P06P
SPU18P06P
f
-7.5
-20
h
-8.0
2008-02-18
i
g
-9.0
j
A
h
I
I
-10.0
k
A
D
D
i
k
l
j
-20.0
-38
-30
l