SPU18P06P Infineon Technologies, SPU18P06P Datasheet - Page 2

• Manufacturer Part Number: SPU18P06P
• Description: MOSFET P-CH 60V 18.6A TO-251
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPU18P06P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000012303; SPU18P06P; SPU18P06PIN; SPU18P06PX; SPU18P06PXK

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
= -1 mA
Rev 3.1
= -60 V, V
= -60 V, V
= 0 V, I
= -20 V, V
= -10 V, I
2
cooling area
D
= -250 µA
D
GS
GS
DS
= -13.2 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 °C
= 150 °C
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
min.
min.
-2.1
-60
-
-
-
-
-
-
-
-
Values
Values
typ.
-0.1
typ.
-10
-10
0.1
-3
-
-
-
-
-
SPD18P06P
SPU18P06P
max.
max.
-100
-100
0.13
1.85
100
75
50
-4
-1
2008-02-18
-
Unit
V
µA
nA
W
Unit
K/W