SPU18P06P Infineon Technologies, SPU18P06P Datasheet - Page 7

• Manufacturer Part Number: SPU18P06P
• Description: MOSFET P-CH 60V 18.6A TO-251
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPU18P06P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000012303; SPU18P06P; SPU18P06PIN; SPU18P06PX; SPU18P06PXK

Drain-source on-state resistance
R
parameter : I
Typ. capacitances
C = f ( V
parameter: V
DS(on)
Rev 3.1
W
pF
0.38
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
10
10
10
10
-60
4
3
2
1
0
SPD18P06P
DS
= f ( T
)
-20
-5
D
GS
j
)
= -13.2 A, V
-10
=0V, f =1 MHz
20
98%
typ
-15
60
-20
GS
100
= -10 V
-25
140 °C
V
T
V
C
C
C
j
DS
iss
oss
rss
-35
200
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-5.0
-4.4
-4.0
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
A
V
0.0
-1
-60
0.0
2
1
0
SPD18P06P
= f ( T j )
SD
-0.4
)
-20
GS
-0.8
p
= V
20
= 80 µs
-1.2
DS
T
T
T
T
j
j
j
j
60
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
, I
-1.6
D
SPD18P06P
SPU18P06P
= -1 mA
100
-2.0
2008-02-18
140
-2.4
V
V
T
V
j
SD
max
typ
min
-3.0
200