FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 107

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Transistors – General Purpose Transistors (Continued)
BCX71J
BC857
BC860
MMBT200
MMBT200A
BCX71K
BCX17
BC807
BCW68G
KST5086
KST5087
KSA812
MMBT5087
KST55
MMBTA55
BCW89
KST2907A
MMBT4354
MMBT4355
BSR16
MMBT2907A
BC856
KST56
MMBTA56
MMBT4356
BSS63
FJV992
KST5401
MMBT5401
KST93
KST92
MMBTA92
SOT-323 NPN Configuration
FJX3904
FJX2222A
Products
V
CEO
100
120
150
150
200
300
300
45
45
45
45
45
45
45
45
45
50
50
50
50
60
60
60
60
60
60
60
60
65
80
80
80
40
40
(V)
V
CBO
110
160
200
300
120
160
300
45
50
50
60
60
45
50
50
60
50
50
60
50
60
60
80
60
60
60
60
60
80
80
80
80
60
75
(V)
V
EBO
5
5
5
6
6
5
5
5
5
3
3
5
3
4
4
5
5
5
5
5
5
5
4
4
5
6
5
5
5
5
5
5
6
6
(V)
Max (A)
0.05
0.05
0.05
0.1
0.1
0.1
0.5
0.5
0.5
0.5
0.8
0.8
0.1
0.1
0.5
0.5
0.5
0.6
0.8
0.8
0.8
0.8
0.1
0.5
0.5
0.8
0.2
0.5
0.6
0.5
0.5
0.5
0.2
0.6
I
C
Min
250
110
110
100
300
380
100
100
160
150
250
250
100
120
100
100
100
100
110
100
200
100
100
90
50
50
50
50
30
60
60
40
40
40
2-102
Discrete Power Products –
Max
460
800
800
450
600
630
600
630
400
500
800
600
800
260
300
500
400
300
300
800
250
800
240
240
300
300
–
–
–
–
–
–
–
–
h
FE
@V
10
10
10
10
10
10
10
10
10
10
CE
5
5
5
1
1
5
1
1
1
5
5
6
5
1
1
5
5
1
1
1
6
5
5
1
(V) @I
C
100
100
100
150
100
150
150
100
150
0.1
0.1
0.1
10
10
10
10
10
10
10
25
10
10
10
10
10
10
2
2
2
2
1
2
2
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.55
0.65
0.65
0.55
0.62
0.25
0.25
0.15
0.65
0.25
0.25
0.15
0.25
0.4
0.4
0.7
1.5
0.3
0.3
0.3
0.3
0.3
1.6
1.6
1.6
0.3
0.5
0.5
0.5
0.5
0.5
0.3
1
1
@I
V
CE (sat)
1000
C
100
100
200
200
500
500
300
100
100
100
500
150
500
500
100
100
100
150
500
50
50
10
10
10
10
25
10
50
50
20
20
20
50
(mA) @I
1.25
1.25
B
100
2.5
20
20
50
50
30
10
10
10
50
15
50
50
10
10
15
50
5
5
1
1
1
1
5
1
5
5
2
2
2
5
(mA)