FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 23

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SO-8 (Continued)
FDS2572
FDS2582
FDS2570
HUF75831SK8T
HUFA75831SK8T
FDS2670
FQS4901
FQS4903
RF1K49092
FDS9934C
FDS8928A
FDS4501H
FDS8958A
SI4532DY
NDS9952A
FDS8333C
FDS4559
FQS4900
NDS9948
SSD2011A
NDS9407
FDS4675
FDS4935
FDS4935A
FDS6975
FDS8947A
SI4953DY
FDS6993
FDS4953
NDS9953A
FDS9953A
RF1K49223
RF1K4922396
FDS7779Z
FDS6679
FDS6679Z
FDS6675A
FDS6675
SO-8 Complementary N- and P-Channel
SO-8 P-Channel
Products
500 | 500
Min. (V)
60 | -300
-30 | -12
20 | -20
30 | -20
30 | -20
30 | -30
30 | -30
30 | -30
60 | -60
12 | 12
30 | 30
BV
150
150
150
150
150
200
400
-60
-60
-60
-40
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
-30
DSS
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.028 | 0.052
0.065 | 0.085
0.055 | 0.105
0.08 | 0.13
0.55 | 15.5
0.08 | 0.13
0.0072
0.047
0.066
0.095
0.095
0.018
0.013
0.023
0.023
0.032
0.052
0.053
0.055
0.055
0.009
0.009
0.013
0.014
10V
0.13
0.25
0.28
0.15
0.13
0.15
4.2
6.2
–
–
R
0.65@5V | 16@5V
DS(ON)
0.046 | 0.023
0.075 | 0.135
0.017 | 0.085
0.03 | 0.055
0.03 | 0.055
0.095 | 0.19
0.053@6V
0.04 | 0.08
0.096@6V
2-18
0.13 | 0.2
0.0115
0.017
0.035
0.035
0.045
0.095
0.095
0.013
0.013
0.019
4.5V
0.24
0.08
0.36
0.02
0.5
0.5
0.2
–
–
–
–
–
–
Max (Ω) @ V
0.038 | 0.072
0.043 | 0.09
Replaced by HUF75831SK8T
0.063
0.024
2.5V
GS
Replaced by NDS9953A
Replaced by FDS8928A
Replaced by FDS9953A
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
=
Discrete Power Products –
1.8V
0.03
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
10.7 | 9.6
19.8 | 20
12.5 | 15
6.2 | 8.7
4.7 | 4.1
1.6 | 3.6
9.5 | 10
17 | 13
3.7 | 5
Typ. (nC)
GS
14.5
5.8
6.3
2.5
1.5
29
11
35
35
27
23
16
40
15
15
19
70
71
67
24
30
9
8
–
6
= 5V
9.3 | 5.6
3.9 | 3.5
3.7 | 2.9
4.1 | 3.4
4.5 | 3.5
1.3 | 0.3
4.3 | 6.8
6.5 | –5
5.5 | 4
I
D
0.45
0.37
7 | 5
4.9
4.5
2.3
4.9
2.9
2.5
11
16
13
13
11
11
3
3
7
6
5
3
3
2
7
4
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.4
2.5
2.5
2.5
2.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
3
(W)