FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 152

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Transient Voltage Suppressors (Continued)
SA24CA
P6KE30A
P6KE30CA
SA26A
SA26CA
SA28A
SA28CA
P6KE33A
P6KE33CA
SA30A
SA30CA
P6KE36A
P6KE36CA
SA33A
SA33CA
P6KE39A
P6KE39CA
SA36A
SA36CA
P6KE43A
P6KE43CA
SA40A
SA40CA
P6KE47A
P6KE47CA
SA43A
SA43CA
P6KE51A
P6KE51CA
SA45A
SA45CA
P6KE56A
P6KE56CA
SA48A
SA48CA
Products
Voltage (V)
Stand-off
Reverse
V
25.6
25.6
28.2
28.2
30.8
30.8
33.3
33.3
36.8
36.8
40.2
40.2
43.6
43.6
47.8
47.8
RWM
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
45
45
48
48
V
Min
26.7
28.5
28.5
28.9
28.9
31.1
31.1
31.4
31.4
33.3
33.3
34.2
34.2
36.7
36.7
37.1
37.1
40.9
40.9
44.4
44.4
44.7
44.7
47.8
47.8
48.5
48.5
53.2
53.2
53.3
53.3
10
40
50
50
BR
Voltage (V)
Breakdown
Max
29.5
31.5
31.5
31.9
31.9
34.4
34.4
34.7
34.7
36.8
36.8
37.8
37.8
40.6
40.6
44.2
44.2
45.2
45.2
49.1
49.1
49.4
49.4
52.8
52.8
53.6
53.6
55.3
55.3
58.8
58.8
58.9
58.9
41
41
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-147
38.9
41.4
41.4
42.1
42.1
45.4
45.4
45.7
45.7
48.4
48.4
49.9
49.9
53.3
53.3
53.9
53.9
58.1
58.1
59.3
59.3
64.5
64.5
64.8
64.8
69.4
69.4
70.1
70.1
72.7
72.7
77.4
77.4
V
77
77
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
12.8
14.5
14.5
11.9
11.9
13.2
13.2
10.3
10.3
11.2
11.2
10.1
10.1
PPM
9.4
8.6
7.8
9.3
7.2
8.6
6.9
7.8
6.5
9.4
8.6
7.8
9.3
7.2
8.6
6.9
7.8
6.5
11
11
12
12
Leakage @ V
I
R
Max Reverse
(µA)
1
5
5
1
1
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
1
RWM
Diodes and Rectifiers
P
PPM
500
600
600
500
500
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
500
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction