FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 201

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
MOSFET: QFET
F Q P 18 N 50 __ V2
(Continued)
®
C: Advanced QFET C-series
Empty: Previous Version of QFET
V2: Advanced QFET V2-series
Empty: Standard Product
L: Logic Level Product
F: Fast Recovery MOSFET
N: N-Channel
P: P-Channel
A: TO-3P
B: D
D: D-PAK
E: TO-126
H: TO-247
N: TO-92
P: TO-220
S: 8-SOP
Q: QFET Technology
C: SuperFET Technology
Series
Optional
Voltage Rating (x 10)
Channel Polarity
Current Rating
Package
Base Technology
Fairchild
2
-PAK
AF: TO-3PF
I: I
U: I-PAK
G: 8DIP
L: TO-264
NL: TO-92L
PF: TO-220F
T: SOT-223
2
8-8
-PAK
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