BSS192E6327 Infineon Technologies, BSS192E6327 Datasheet

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SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • -0.8...-2.0 V GS(th) Type V DS BSS 192 -240 V Type Ordering Code BSS 192 Q62702-S634 Maximum Ratings Parameter Drain source voltage Drain-gate voltage ...

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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...

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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance - MHz GS DS Output capacitance ...

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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage -0 ...

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Power dissipation tot A 1.2 W 1.0 P tot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Safe operating area I = parameter : D ...

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Typ. output characteristics parameter µ ° -0. tot -0. -0.24 -0.20 -0.16 -0.12 -0.08 ...

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Drain-source on-resistance (on) j parameter -0. (on 98 typ -60 - Typ. capacitances C ...