BSS192E6327 Infineon Technologies, BSS192E6327 Datasheet - Page 2

• Manufacturer Part Number: BSS192E6327
• Description: MOSFET P-CH 240V 150MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS192E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 130pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Gate Charge (qg) @ Vgs: -
• Other names: BSS192; BSS192INTR

Electrical Characteristics, at T
Semiconductor Group
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
GS
GS =
DS
DS
DS
GS
GS
= -240 V, V
= -240 V, V
= -60 V, V
= 0 V, I
= -20 V, V
= -10 V, I
V
DS,
I
D
D
= -1 mA
= -0.25 mA, T
D
GS
DS
GS
GS
= -0.15 A
= 0 V, T
= 0 V
= 0 V, T
= 0 V, T
j
= 25 °C
j
j
j
= 25 °C
= 125 °C
= 25 °C
j
= 25°C, unless otherwise specified
1)
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
Symbol
T
T
R
j
stg
thJA
min.
-
-
-
-
-
-240
-0.8
Values
typ.
-
-
-1.5
-0.1
-10
-10
10
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Values
E
125
max.
-
-2
-1
-100
-0.2
-100
20
18/02/1997
BSS 192
Unit
°C
K/W
Unit
V
µA
nA