BSS192E6327 Infineon Technologies, BSS192E6327 Datasheet - Page 6

• Manufacturer Part Number: BSS192E6327
• Description: MOSFET P-CH 240V 150MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS192E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 130pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Gate Charge (qg) @ Vgs: -
• Other names: BSS192; BSS192INTR

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
D
DS
=
-0.34
-0.28
-0.24
-0.20
-0.16
-0.12
-0.08
-0.04
-0.40
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.00
2 x I
V
A
A
DS
0
0
P
)
D
tot
-1
-1
p
x R
= 1W
p
= 80 µs , T
= 80 µs
-2
-2
DS(on)max
-3
-3
l
k
j
i
-4
-4
h
j
= 25 °C
-5
-5
-6
-6
g
-7
-7
D
= f ( V
e
c
a
f
d
b
-8
-8
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
V
V
DS
GS
GS
V
V
-10.0
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
-7.0
-8.0
-9.0
)
-10
-10
6
Typ. drain-source on-resistance
R
parameter: t
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS (on)
DS
fs
0.20
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
2 x I
65
55
50
45
40
35
30
25
20
15
10
0.00
S
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30
5
0
=
V
a
-2.0
D
GS
a
I
p
[V] =
-0.04
x R
D
b
p
-2.5
= 80 µs, T
b
)
= 80 µs,
DS(on)max
-3.0
c
-0.08
c
-3.5
d
-4.0
e
j
-0.12
= 25 °C
-4.5
d
f
-5.0
g
-0.16
e
-6.0
h
-7.0
-0.20
i
18/02/1997
BSS 192
-8.0
fs
j
I
D
I
A
D
= f ( I
f
A
-9.0
k
k
i
g
j
-0.40
-0.26
-10.0
l
h
l
D
)