BSS192E6327 Infineon Technologies, BSS192E6327 Datasheet - Page 4

• Manufacturer Part Number: BSS192E6327
• Description: MOSFET P-CH 240V 150MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS192E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 130pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Gate Charge (qg) @ Vgs: -
• Other names: BSS192; BSS192INTR

Electrical Characteristics, at T
Semiconductor Group
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
A
A
GS
= 25 °C
= 25 °C
= 0 V, I
F
= -0.3 A, T
j
= 25 °C
j
= 25°C, unless otherwise specified
Symbol
I
I
V
4
S
SM
SD
min.
-
-
-
Values
typ.
-
-
-0.85
max.
-0.15
-0.6
-1.2
18/02/1997
BSS 192
Unit
A
V