SPD35N10 Infineon Technologies, SPD35N10 Datasheet
SPD35N10
Specifications of SPD35N10
SPD35N10INTR
SPD35N10XT
SPD35N10XTINTR
SPD35N10XTINTR
Available stocks
Related parts for SPD35N10
SPD35N10 Summary of contents
Page 1
... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Preliminary data Ordering Code Q67042-S4125 Symbol puls E AS dv/dt =175°C jmax tot stg Page 1 SPD35N10 Product Summary 100 DS(on P-TO252 Marking 35N10 Value 35 26.4 140 245 6 ±20 150 -55... +175 55/175/56 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Preliminary data Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) Page 2 SPD35N10 Values Unit min. typ. max K 100 - - Values Unit min. typ. max. 100 - ...
Page 3
... =35A d(off =80V, I =35A =80V, I =35A 10V GS V (plateau) V =80V, I =35A =25° =0V, I =35A =50V /dt=100A/µ Page 3 SPD35N10 Values min. typ. max 1180 1570 pF - 245 326 - 137 206 - 12.2 18 6 140 - 0.95 1. 100 - 230 290 2002-01-30 Unit ...
Page 4
... D DS parameter : ° SPD35N10 Preliminary data 2 Drain current parameter: V SPD35N10 °C 190 Transient thermal impedance thJC parameter : SPD35N10 10 K 2.5µ µs 100 µ Page 4 SPD35N10 ) 100 120 140 160 ) 0.50 single pulse - 2002-01-30 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
Page 5
... Typ. output characteristic =25° parameter µ Typ. transfer characteristics parameter µ Preliminary data 6 Typ. drain-source on resistance R DS(on) parameter: V 500 [V 300 200 b 100 Typ. forward transconductance DS(on)max fs parameter Page 5 SPD35N10 = =25° 2002-01- 100 ...
Page 6
... Typ. gate threshold voltage V GS(th parameter 140 °C 100 200 Forward character. of reverse diode parameter iss C oss C rss Page 2 =83µA D 1.5 -65 - µ SPD35N10 °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 SPD35N10 I =1mA D 115 °C 175 2002-01-30 ...
Page 7
... Drain-source breakdown voltage (BR)DSS j SPD35N10 120 V 114 112 110 108 106 104 102 100 -60 - Preliminary data 14 Typ. gate charge parameter 125 145 °C 185 T j 100 140 °C 200 T j Page 7 SPD35N10 ) Gate = 35 A pulsed D SPD35N10 max 0 max Gate 2002-01-30 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Preliminary data Page 8 SPD35N10 2002-01-30 ...