SPD35N10 Infineon Technologies, SPD35N10 Datasheet - Page 7

• Manufacturer Part Number: SPD35N10
• Description: MOSFET N-CH 100V 35A DPAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD35N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: SP000013853; SPD35N10INTR; SPD35N10XT; SPD35N10XTINTR; SPD35N10XTINTR

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
270
210
180
150
120
120
114
112
110
108
106
104
102
100
= f ( T
V
90
60
30
98
96
94
92
90
D
0
-60
25
SPD35N10
= 35 A , V
j
= f ( T
)
45
-20
65
j
)
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25
°C
°C
T
T
Preliminary data
j
j

185
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f ( Q
V
16
12
10
8
6
4
2
0
0
SPD35N10
10
Gate
D
= 35 A pulsed
)
20
0,2
30
V
DS max
40
50
SPD35N10
0,8 V
2002-01-30
60
DS max
nC
Q
Gate
75