SPD35N10 Infineon Technologies, SPD35N10 Datasheet - Page 3

• Manufacturer Part Number: SPD35N10
• Description: MOSFET N-CH 100V 35A DPAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD35N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: SP000013853; SPD35N10INTR; SPD35N10XT; SPD35N10XTINTR; SPD35N10XTINTR

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Preliminary data
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=26.4A
=35A, R
=25°C
=50V, I
/dt=100A/µs


=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
Conditions
2 *I
D
*R
F =
G
F
DS
D
D
D
=35A
=7
DS(on)max
GS
l
S
=35A
=35A,
=35A
=25V,
,

=10V,
,
min.
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1180
12.2
0.95
typ.
245
137
230
6.5
6.1
23
63
39
23
27
49
80
-
-
SPD35N10
2002-01-30
max.
1570 pF
18.3 ns
1.25 V
326
206
140
100
290
8.6
95
59
34
41
65
35
-
-
Unit
S
nC
V
A
ns
nC