SPD22N08S2L-50 Infineon Technologies, SPD22N08S2L-50 Datasheet - Page 2

• Manufacturer Part Number: SPD22N08S2L-50
• Description: MOSFET N-CH 75V 25A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD22N08S2L-50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2V @ 31µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013910; SPD22N08S2L50T

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Defined by design. Not subject to production test.
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=31µA
=0V, I
=75V, V
=75V, V
=20V, V
=4.5V, I
=10V, I
2
cooling area
D
D
=1mA
GS
GS
DS
D
=11A
=11A
=0V, T
=0V, T
=0V
j
j
2)
=25°C
=125°C
GS
= V
DS
j
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
min.
min.
1.2
75
-
-
-
-
-
-
-
-
-
Values
Values
0.01
SPD22N08S2L-50
1.34
typ.
typ.
1.6
48
38
1
1
-
-
-
-
max.
max.
100
100
100
65
50
75
50
2003-05-09
2
1
2
-
Unit
V
µA
nA
mΩ
Unit
K/W