SPD22N08S2L-50 Infineon Technologies, SPD22N08S2L-50 Datasheet - Page 7

• Manufacturer Part Number: SPD22N08S2L-50
• Description: MOSFET N-CH 75V 25A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD22N08S2L-50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2V @ 31µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013910; SPD22N08S2L50T

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I D =22A, V
(BR)DSS
AS
mJ
100
= f (T
V
92
88
86
84
82
80
78
76
74
72
70
68
80
70
60
50
40
30
20
10
-60
0
20
SPD22N08S2L-50
= f (T
j
)
40
-20
D
=10 mA
j
)
60
DD
20
= 25 V, R
80
60
100
100
GS
120
= 25 Ω
140
140
°C
°C
T
T
j
j
200
180
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPD22N08S2L-50
4
Gate
D
= 25 A pulsed
8
)
12
0,2
V
16
DS max
SPD22N08S2L-50
20
24
0,8 V
28
DS max
2003-05-09
32
nC
Q
Gate
40