SPD22N08S2L-50 Infineon Technologies, SPD22N08S2L-50 Datasheet - Page 5

• Manufacturer Part Number: SPD22N08S2L-50
• Description: MOSFET N-CH 75V 25A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD22N08S2L-50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2V @ 31µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013910; SPD22N08S2L50T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
A
A
60
50
45
40
35
30
25
20
15
10
50
30
20
10
5
0
0
0
0
DS
SPD22N08S2L-50
GS
P
tot
); T
); V
= 75W
p
p
1
2
= 80 µs
h
= 80 µs
j
=25°C
DS
g
≥ 2 x I
2
f
4
D
e
3
x R
6
DS(on)max
4
c
a
8
d
b
V
GS
a
b
c
d
e
f
g
h
V
[V]
V
V
V
DS
GS
10.0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
11
6
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
160
120
100
S
80
60
40
20
40
30
25
20
15
10
0
5
0
0
0
D
SPD22N08S2L-50
= f (I
V
); T
GS
4.0
c
4
[V] =
5
4.5
j
d
=25°C
D
c
fs
GS
8
)
5.0
e
10
12
5.5
f
16 20
15
g
6.0
SPD22N08S2L-50
10.0
h
20
24
25
28 32
2003-05-09
30
d
36
A
g
I
I
e
h
A
D
D
f
42
40