SPD22N08S2L-50 Infineon Technologies, SPD22N08S2L-50 Datasheet - Page 6

• Manufacturer Part Number: SPD22N08S2L-50
• Description: MOSFET N-CH 75V 25A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD22N08S2L-50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2V @ 31µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013910; SPD22N08S2L50T

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
mΩ
nF
190
160
140
120
100
10
10
10
10
80
60
40
20
0
-60
4
3
2
1
0
SPD22N08S2L-50
= f (T
DS
)
-20
D
j
5
GS
)
= 11 A, V
=0V, f=1 MHz
20
10
98%
60
typ
GS
15
= 10 V
100
20
C
C
C
oss
140 °C
iss
rss
V
T
V
j
DS
200
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
1.5
0.5
V
A
3
2
1
0
-60
-1
2
1
0
0
= f (T j )
SD
SPD22N08S2L-50
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
DS
1.2
31µA
T
T
T
T
SPD22N08S2L-50
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
1.6
100
2
2003-05-09
155µA
2.4
°C
T
V
V
j
SD
180
3