2N5950 Fairchild Semiconductor, 2N5950 Datasheet - Page 125
![AMP RF N-CHAN 30V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
2N5950
Manufacturer Part Number
2N5950
Description
AMP RF N-CHAN 30V TO-92
Manufacturer
Fairchild Semiconductor
Specifications of 2N5950
Transistor Type
N-Channel JFET
Voltage - Rated
30V
Current Rating
15mA
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N-Channel
Drain Source Voltage Vds
15 V
Gate-source Cutoff Voltage
2.5 V to 6 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Drain Current (idss At Vgs=0)
500 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Configuration
Single
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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JFETs (Continued)
BF244C
BF245C
2N5639
PN4391
2N5638
BF246A
J113
J112
J111
J201
PF5102
PN4117
PN4117A
PF5103
PN4118
J202
PN4093
PN4119
PN4092
U1898
PN4091
U1897
KSK30
TO-92 P-Channel
2N3820
J270
J177
J176
J271
P1087
J175
P1086
J174
2N5460
Products
BV
(V)
30
30
30
30
30
30
35
35
35
40
40
40
40
40
40
40
40
40
40
40
40
40
50
20
30
30
30
30
30
30
30
30
40
GDS
Dissipation
Power
(mW)
350
350
625
625
625
625
625
625
625
625
625
350
350
625
350
625
625
350
625
625
625
625
100
350
350
350
350
350
350
350
350
350
350
P
D
Min (V)
0.75
0.5
0.5
0.6
0.5
0.3
0.7
0.6
0.6
1.2
0.8
0.4
0.5
0.8
1.5
–
–
3
1
1
2
5
–
–
3
–
5
4
1
2
2
5
1
Typ (V) Max (V) @ I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
14.5
GS
1.5
1.6
1.8
1.8
2.7
2.5
4.5
10
12
10
10
10
10
10
8
8
8
3
5
3
4
5
6
7
7
5
8
2
4
5
6
6
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
D
0.1
–
–
1
1
1
1
1
1
(µA) @ V
2-120
Discrete Power Products –
15
15
20
15
20
15
10
10
15
10
20
20
10
20
20
20
20
10
10
15
15
15
15
15
15
15
15
15
DS
–
–
5
5
5
(V) Min (mA) Max (mA) @V
0.03
0.03
0.08
0.2
0.9
0.2
0.3
0.3
1.5
12
12
25
50
50
30
20
10
15
15
30
30
10
20
2
5
4
8
2
2
6
5
7
1
0.09
0.09
0.24
150
100
I
4.5
0.6
6.5
25
25
80
20
40
15
15
20
25
50
60
DSS
–
–
–
–
–
–
–
–
–
–
–
–
1
5
DS
15
15
20
20
20
15
15
15
15
20
15
10
10
15
10
20
20
10
20
20
20
20
10
10
15
15
15
15
20
15
20
15
15
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.07
0.08
3.5
7.5
0.1
0.8
–
3
–
–
–
8
–
–
–
–
–
–
–
–
–
–
–
6
–
–
8
–
–
–
–
1
GFS
0.21
0.21
0.25
0.33
6.5
15
18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
4
100
300
150
125
R
(Ω)
250
60
30
30
50
30
80
50
50
30
30
75
85
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0001
0.0002
0.0002
0.0002
0.001
0.001
0.001
0.001
0.001
D
(µA)
0.01
0.01
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
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