2N5950 Fairchild Semiconductor, 2N5950 Datasheet - Page 84
![AMP RF N-CHAN 30V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
2N5950
Manufacturer Part Number
2N5950
Description
AMP RF N-CHAN 30V TO-92
Manufacturer
Fairchild Semiconductor
Specifications of 2N5950
Transistor Type
N-Channel JFET
Voltage - Rated
30V
Current Rating
15mA
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N-Channel
Drain Source Voltage Vds
15 V
Gate-source Cutoff Voltage
2.5 V to 6 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Drain Current (idss At Vgs=0)
500 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Configuration
Single
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TIP127
KSB601
BDW24
BDW24A
BDW24B
BDW24C
BDX54
BDX54A
TIP105
BDX54B
TIP106
BDX54C
TIP107
BDX34A
BDX34B
TIP146T
BDX34C
TIP147T
BDW94
BDW94C
TO-220F NPN Configuration
KSD1413
KSD1589
KSD1417
BDW93CF
TO-220F PNP Configuration
FJPF9020
KSB1023
KSB1098
KSB1022
TO-251(IPAK) NPN Configuration
KSD1222
TO-251(IPAK) PNP Configuration
KSB907
I
C
10
10
10
10
10
12
12
12
5
5
6
6
6
6
8
8
8
8
8
8
8
3
5
7
2
3
5
7
3
3
(A)
V
CEO
100
100
100
100
100
100
100
100
100
100
550
100
45
60
80
45
60
60
80
80
60
80
80
45
60
60
60
60
40
40
(V) V
CBO
100
100
100
100
100
100
100
100
150
100
550
100
45
60
80
45
60
60
80
80
60
80
80
45
60
60
60
60
60
60
(V) V
EBO
–
–
–
–
–
–
5
7
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7
5
6
5
7
5
5
5
(V)
P
C
65
30
50
50
50
50
60
60
80
60
80
60
80
70
70
80
70
80
80
80
20
20
30
30
15
20
20
30
15
15
(W)
1000
2000
1000
1000
1000
1000
1000
2000
2000
2000
2000
2000
2000
2000
2000
Min
750
750
750
750
750
750
750
750
750
750
750
750
750
750
400
2-79
Discrete Power Products –
15000
20000
20000
20000
20000
20000
20000
20000
20000
20000
15000
15000
20000
15000
15000
Max
700
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
0.5
C
3
2
2
2
2
3
3
3
3
3
3
3
4
3
5
3
5
5
5
1
3
3
5
1
1
3
3
1
1
(A) @V
CE
3
2
3
3
3
3
3
3
4
3
4
3
4
3
3
4
3
4
3
3
2
2
3
–
4
2
2
3
2
2
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.95
0.9
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5
2.5
2.5
2.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
3
3
2
2
2
2
3
3
3
3
3
3
3
4
3
5
3
5
5
5
2
3
3
5
1
2
3
3
2
2
(A) @I
0.012
0.003
0.008
0.008
0.008
0.008
0.012
0.012
0.006
0.012
0.006
0.012
0.006
0.008
0.006
0.006
0.004
0.003
0.006
0.004
0.003
0.006
0.004
0.004
0.01
0.01
0.02
0.02
0.02
0.02
B
(A)
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