2N5950 Fairchild Semiconductor, 2N5950 Datasheet - Page 52
![AMP RF N-CHAN 30V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
2N5950
Manufacturer Part Number
2N5950
Description
AMP RF N-CHAN 30V TO-92
Manufacturer
Fairchild Semiconductor
Specifications of 2N5950
Transistor Type
N-Channel JFET
Voltage - Rated
30V
Current Rating
15mA
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N-Channel
Drain Source Voltage Vds
15 V
Gate-source Cutoff Voltage
2.5 V to 6 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Drain Current (idss At Vgs=0)
500 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Configuration
Single
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
- Current page: 52 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
TO-262 (I
FQI13N10
FQI13N10L
IRFI520A
FQI7N10
FQI7N10L
IRFI510A
FQI32N12V2
FDI2532
FQI28N15
FQI16N15
FQI9N15
FQI6N15
FQI5N15
IRLI630A
IRLI620A
IRLI610A
FQI34N20
FQI32N20C
IRFI650B
FQI19N20L
FQI19N20
FQI19N20C
IRFI640B
FQI12N20L
FQI10N20C
FQI10N20L
IRFI630B
FQI7N20
FQI7N20L
IRFI620B
FQI5N20
FQI5N20L
FQI4N20L
FQI4N20
IRFI610B
FQI27N25
IRFI654B
IRFI644B
IRFI634B
Products
2
PAK) (Continued)
Min. (V)
BV
100
100
100
100
100
100
120
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.016
0.075
0.082
0.085
10V
0.18
0.18
0.35
0.35
0.05
0.09
0.16
0.14
0.15
0.17
0.18
0.28
0.36
0.36
0.69
0.75
1.35
0.11
0.14
0.28
0.45
0.2
0.4
0.4
0.6
0.8
0.4
0.8
1.2
1.2
1.4
1.5
–
–
–
R
DS(ON)
0.024@6V
0.38@5V
0.15@5V
0.32@5V
0.38@5V
0.78@5V
1.25@5V
0.2@5V
0.4@5V
0.8@5V
1.5@5V
1.4@5V
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-47
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
18.6
10.3
82.5
40.5
GS
8.7
5.8
4.6
8.5
6.5
5.4
6.1
6.8
4.8
7.2
12
16
41
86
40
23
10
60
95
27
31
45
16
20
13
22
12
50
95
47
29
8
6
4
5
= 5V
I
D
12.8
12.8
16.4
19.4
11.6
25.5
9.2
7.3
7.3
5.6
6.4
5.4
3.3
9.5
6.6
6.5
4.5
4.5
3.8
3.6
3.3
8.1
32
79
28
31
28
28
21
19
18
10
15
14
9
9
5
9
5
(A)
MOSFETs
P
D
150
310
168
108
180
156
156
140
140
139
139
180
156
139
65
65
45
40
40
33
75
63
54
69
39
33
90
72
87
72
63
63
47
52
52
45
45
38
74
(W)
Related parts for 2N5950
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![SM2G50US60](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FTP5027RTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FTP5021OTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FDMS86300DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3006SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3008SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3016DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86101DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDD86113LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86500DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8558S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8560S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8570S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMC86116LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86250](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: