2N5950 Fairchild Semiconductor, 2N5950 Datasheet - Page 68
![AMP RF N-CHAN 30V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
2N5950
Manufacturer Part Number
2N5950
Description
AMP RF N-CHAN 30V TO-92
Manufacturer
Fairchild Semiconductor
Specifications of 2N5950
Transistor Type
N-Channel JFET
Voltage - Rated
30V
Current Rating
15mA
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N-Channel
Drain Source Voltage Vds
15 V
Gate-source Cutoff Voltage
2.5 V to 6 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Drain Current (idss At Vgs=0)
500 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Configuration
Single
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
- Current page: 68 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
TO-220F (Continued)
FQPF6N80C
FQPF5N80
FQPF4N80
FQPF3N80C
FQPF3N80
FQPF2N80
FQPF9N90C
FQPF8N90C
FQPF5N90
FQPF6N90C
FQPF4N90
FQPF4N90C
FQPF3N90
FQPF2NA90
FQPF2N90
FQPF3P50
FQPF1P50
FQPF4P40
FQPF2P40
FQPF9P25
SFS9644
FQPF6P25
SFS9634
SFS9624
FQPF2P25
SFS9614
FQPF12P20
SFS9640
FQPF7P20
SFS9630
FQPF5P20
SFS9620
FQPF3P20
SFS9610
TO-220F P-Channel
Products
Min. (V)
BV
--400
-500
-500
-400
-250
-250
-250
-250
-250
-250
-250
-200
-200
-200
-200
-200
-200
-200
-200
800
800
800
800
800
800
900
900
900
900
900
900
900
900
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
4.25
10.5
0.62
0.47
0.69
2.5
2.6
3.6
4.8
6.3
1.4
1.9
2.3
2.3
3.1
4.2
5.8
7.2
4.9
3.1
6.5
0.8
1.1
1.3
2.4
0.5
0.8
1.4
1.5
2.7
5
4
4
3
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-63
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.5
21
25
19
13
15
12
45
35
31
30
24
17
20
15
12
18
11
18
10
29
45
21
29
16
31
46
19
29
10
15
6
9
9
=5V
I
D
5.5
2.8
2.2
1.8
1.5
2.5
2.1
1.7
1.4
1.9
2.4
1.3
4.9
4.2
3.4
2.4
1.8
1.3
7.3
6.2
5.2
4.4
3.4
2.2
1.4
3
8
6
3
6
4
1
6
3
(A)
MOSFETs
P
D
51
47
43
39
39
35
68
60
51
56
47
47
43
39
35
39
28
39
28
50
40
45
33
28
32
13
50
40
45
33
38
28
32
13
(W)
Related parts for 2N5950
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![SM2G50US60](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FTP5027RTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FTP5021OTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FDMS86300DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3006SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3008SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3016DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86101DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDD86113LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86500DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8558S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8560S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8570S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMC86116LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86250](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: