M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 19

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M29W256GH7AN6E

Manufacturer Part Number
M29W256GH7AN6E
Description
Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W256GH7AN6E

Package
56TSOP
Cell Type
NOR
Density
256 Mb
Architecture
Sectored
Block Organization
Symmetrical
Location Of Boot Block
Bottom|Top
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 256
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W256GH7AN6E
Manufacturer:
MICRON
Quantity:
1 400
Part Number:
M29W256GH7AN6E
Manufacturer:
ST
0
Part Number:
M29W256GH7AN6E
Manufacturer:
MICRON/镁光
Quantity:
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Table 4.
1. X = V
2. If WP is Low, V
3. Data input as required when issuing a command sequence, performing data polling or block protection.
Table 5.
1. X = V
2. If WP is Low, V
3. Data input as required when issuing a command sequence, performing data polling or block protection.
Bus read
Bus write
Standby
Output disable
Reset
Bus read
Bus write
Standby
Output disable
Reset
Operation
Operation
IL
IL
or V
or V
IH
IH
Bus operations, 8-bit mode
Bus operations, 16-bit mode
(1)
M
.
.
(1)
IL
IL
, the outermost block remains protected.
, the outermost block remains protected.
V
V
V
V
E
X
IH
IL
IL
IL
V
V
V
V
E
X
IH
IL
IL
IL
V
V
V
G
X
X
IH
IH
V
V
IL
V
G
X
X
IH
IH
IL
V
V
V
W
V
V
X
X
V
W
IH
IH
IL
X
X
IH
IH
IL
V
V
V
V
RP
V
RP V
V
V
V
V
V
IH
IH
IH
IH
IL
IH
IH
IH
IH
IL
V
PP
PP
X
X
X
X
X
X
X
X
X
X
(2)
(2)
/WP
/WP
A23, A0, DQ15A-1
Command address
Address Inputs
Cell address
Command address
Address inputs
Cell address
X
X
X
A23, A0
X
X
X
DQ14-DQ8
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Data inputs/outputs
DQ15A-1, DQ14-DQ0
Data inputs/outputs
Data input
Data output
Data input
Data output
DQ7-DQ0
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
(3)
19/97
(3)

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