M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 70

• Manufacturer Part Number: M29W256GH7AN6E
• Description: Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W256GH7AN6E

• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Location Of Boot Block: Bottom|Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 256
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 20. Chip/block erase waveforms (8-bit mode)
1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while they are BAd and 30h for a Block
2. BAd is the block address.
3. See
Table 30.
1. Only available upon customer request.
70/97
Symbol
t
t
t
t
t
t
t
t
t
t
EHWH
WLEL
DVEH
EHDX
GHEL
ELEH
EHEL
ELAX
AVAV
AVEL
Erase command.
and
Table 28: Read AC characteristics
Table 29: Write AC characteristics, write enable
t
Alt.
t
t
t
t
CPH
t
t
t
t
WC
WH
WS
CP
DS
DH
AS
AH
Write AC characteristics, chip enable controlled
DQ0-DQ7
A0-A23/
A–1
E
G
W
tGHWL
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address transition
Output Enable High Chip Enable Low
tAVAV
tELWL
tWLWH
tDVWH
tAVWL
555h
for details on the timings.
AAh
Parameter
tWHDX
tWHEH
2AAh
controlled,
tWHWL
55h
tWLAX
555h
Table 30: Write AC characteristics, chip enable controlled
80h
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
555h
AAh
60 ns
M29W256GH, M29W256GL
65
2AAh
35
45
30
45
0
0
0
0
0
(1)
55h
555h/BAd
70 ns
(1)
75
35
45
30
45
0
0
0
0
0
10h/
30h
AI13335
80 ns
85
35
45
30
45
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns